Abstract The phase change compound Ge2Sb2Te5 (GST225) is exploited in advanced non-volatile electronic memories and in neuromorphic devices which both rely on a fast and reversible transition between the crystalline and amorphous phases induced by Joule heating. The crystallization kinetics of GST225 is a key functional feature for the operation of these devices. We report here on the... https://canadabrass.shop/product-category/posters/